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RSAM共振可飽和吸收鏡

品牌：德國(guó)Batop
型號(hào)： RSAM
產(chǎn)地：歐洲德國(guó)
供應(yīng)商報(bào)價(jià)：面議

上海屹持光電技術(shù)有限公司更新時(shí)間：2025-04-24 13:05:05

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同類產(chǎn)品半導(dǎo)體可飽和吸收鏡SESAM(12件)

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共振可飽和吸收鏡RSAM類似于可飽和吸收鏡SAM，但是有更大的飽和吸收率、更小的帶寬以及更低的飽和通量。共振可飽和吸收鏡被設(shè)計(jì)成Gires–Tournois干涉儀的結(jié)構(gòu)，一塊可飽和吸收體放置在共振腔內(nèi)光學(xué)波腹處的位置，下圖原理簡(jiǎn)介：

規(guī)格參數(shù)

RSAM? - resonant saturable absorber mirror 980 nm

Part No.	Description	Data PDF
RSAM-980-1ps-x	RSAM: λ = 980 nm, modulation depth ΔR = 60 %, low intensity reflectance < 1%, low intensity absorption > 99 %, FWHM = 16 nm, relaxation time t ~ 1 ps
RSAM-974-1ps-x	RSAM: λ = 974 nm, modulation depth ΔR = 60 %, low intensity reflectance < 1%, low intensity absorption > 99 %, FWHM = 16 nm, relaxation time t ~ 1 ps

RSAM? - resonant saturable absorber mirror 1030 nm

Part No.	Description	Data PDF
RSAM-1030-9ps-x	RSAM: λ = 1030 nm, modulation depth ΔR = 60 %, low intensity reflectance < 1%, low intensity absorption > 99 %, FWHM = 25 nm, relaxation time t ~ 9 ps

RSAM? - resonant saturable absorber mirror 1064 nm

Part No.	Description	Data PDF
RSAM-1064-x	RSAM: λ = 1064 nm, modulation depth ΔR = 60 %, low intensity reflectance < 1%, low intensity absorption > 99 %, FWHM = 25 nm, relaxation time t ~ 9 ps
RSAM-1060-x	RSAM: λ = 1060 nm, modulation depth ΔR = 55 %, low intensity reflectance < 1%, low intensity absorption > 99 %, FWHM = 40 nm, relaxation time t ~ 3 ps

RSAM? - resonant saturable absorber mirror 1550 nm

Part No.	Description	Data PDF
RSAM-1550-10ps-4.0-x	RSAM: resonant saturable absorber mirror, λ = 1530 ... 1560 nm, resonant absorptance > 96 %, low intensity reflectance @ 1550 nm < 4 %, relaxation time ~ 10 ps

封裝規(guī)格描述

Part No. example	Description		Data PDF
RSAM-980-1ps-x	Resonant Saturable Absorber Mirror
RSAM-980-1ps-x	working wavelength 980 nm
RSAM-980-1ps-x	relaxation time 1 ps
	unmounted RSAM, thickness: 450 μm
RSAM-980-1ps-4.0-0	chip area: 4.0 mm x 4.0 mm, unmounted
RSAM-980-1ps-1.0b-0	chip area: 1.0 mm x 1.0 mm, batch of 4 unmounted chips
RSAM-980-1ps-1.3b-0	chip area: 1.3 mm x 1.3 mm, batch of 4 unmounted chips
FM-1.3	Fiber Mount for 1.3 mm x 1.3 mm chips
	mounted RSAM , chip area 4mm x 4mm
RSAM-980-1ps-4.0-12.7 g	glued on a copper heat sink with 12.7 mm diameter
RSAM-980-1ps-4.025.0 g	glued on a copper heat sink with 25.0 mm diameter
RSAM-980-1ps-4.0-25.4 g	glued on a copper heat sink with 25.4 mm diameter
RSAM-980-1ps-4.0-12.7 s	soldered on a copper heat sink with 12.7 mm diameter
RSAM-980-1ps-4.0-25.0 s	soldered on a copper heat sink with 25.0 mm diameter
RSAM-980-1ps-4.0-25.4 s	soldered on a copper heat sink with 25.4 mm diameter
RSAM-980-1ps-4.0-25.0 h	thin film soldered 4.0 mm x 4.0 mm chip on water cooled copper heat sink with25.0 mm diameter for high power applications
	mounting position of the RSAM chip	center mounted edge mounted
RSAM-980-1ps-4.0-12.7g-c	center position
RSAM-980-1ps-4.0-12.7g-e	edge position
	fiber mounted RSAMs-x
RSAM-980-1ps-FC/PC	mounted on a 1 m long single mode fiber with FC/PC or other connector type
RSAM-980-1ps-FC/PC with TEC	mounted on a 1 m long single mode fiber with FC/PC or other connector type and TEC (thermoelectric cooler) for fine tuning of the resonance wavelength

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RSAM共振可飽和吸收鏡

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